Title :
A new TDDB lifetime bi-model for eDRAM MIM capacitor with ZrO2 high-k dielectrics
Author :
Chang, S.W. ; Chen, Chia Lin ; Wang, C.J. ; Wu, Kaijie
Author_Institution :
Div. of Reliability Assurance, Taiwan Semicond. Manuf. Co., Hsinchu
Abstract :
A new TDDB lifetime bi-model on ZrO2 based capacitor is proposed as E-model for high field region (>2.7MV/cm) and power law model for low field region (<2.7MV/cm). The current conduction mechanism is identified as Poole-Frenkel tunneling. The mechanism of TDDB is explained as hole trapping enhanced ZrO2 breakdown in high field region and electron trapping dominated ZrO2 breakdown in low field region.
Keywords :
DRAM chips; MIM devices; dielectric devices; electron traps; thin film capacitors; tunnelling; zirconium compounds; MIM capacitor; Poole-Frenkel tunneling; dielectrics; eDRAM; electron trapping; Breakdown voltage; Charge carrier processes; Conducting materials; Electric breakdown; Electron traps; High K dielectric materials; High-K gate dielectrics; Leakage current; MIM capacitors; Temperature dependence;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2008. IPFA 2008. 15th International Symposium on the
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-2039-1
Electronic_ISBN :
978-1-4244-2040-7
DOI :
10.1109/IPFA.2008.4588196
