DocumentCode
2410168
Title
A new TDDB lifetime bi-model for eDRAM MIM capacitor with ZrO2 high-k dielectrics
Author
Chang, S.W. ; Chen, Chia Lin ; Wang, C.J. ; Wu, Kaijie
Author_Institution
Div. of Reliability Assurance, Taiwan Semicond. Manuf. Co., Hsinchu
fYear
2008
fDate
7-11 July 2008
Firstpage
1
Lastpage
4
Abstract
A new TDDB lifetime bi-model on ZrO2 based capacitor is proposed as E-model for high field region (>2.7MV/cm) and power law model for low field region (<2.7MV/cm). The current conduction mechanism is identified as Poole-Frenkel tunneling. The mechanism of TDDB is explained as hole trapping enhanced ZrO2 breakdown in high field region and electron trapping dominated ZrO2 breakdown in low field region.
Keywords
DRAM chips; MIM devices; dielectric devices; electron traps; thin film capacitors; tunnelling; zirconium compounds; MIM capacitor; Poole-Frenkel tunneling; dielectrics; eDRAM; electron trapping; Breakdown voltage; Charge carrier processes; Conducting materials; Electric breakdown; Electron traps; High K dielectric materials; High-K gate dielectrics; Leakage current; MIM capacitors; Temperature dependence;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits, 2008. IPFA 2008. 15th International Symposium on the
Conference_Location
Singapore
Print_ISBN
978-1-4244-2039-1
Electronic_ISBN
978-1-4244-2040-7
Type
conf
DOI
10.1109/IPFA.2008.4588196
Filename
4588196
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