Title :
A rigorous model for trapping and detrapping in thin gate dielectrics
Author :
Goes, Wolfgang ; Karner, Markus ; Sverdlov, Viktor ; Grasser, Tibor
Author_Institution :
Christian Doppler Lab. for TCAD, Tech. Univ. Wien, Vienna
Abstract :
We rigorously model charge trapping and detrapping in ultrathin dielectrics. In addition to charge exchange with the substrate, the poly-gate interface is taken into account which gives rise to decreased charge trapping compared to conventional models designed for thicker gate dielectrics. Finally, an extension of this model also accounting for the shift of trap levels may possibly explain the large time scales experimentally observed during the recovery after application of an on-state voltage.
Keywords :
dielectric thin films; electron traps; hole traps; hot carriers; charge detrapping model; charge trapping model; hot carrier injection; on-state voltage; polygate interface; thicker gate dielectrics comparison; thin gate dielectrics; Annealing; Charge carriers; Dielectric substrates; Electron traps; Laboratories; Microelectronics; Niobium compounds; Silicon; Titanium compounds; Voltage;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2008. IPFA 2008. 15th International Symposium on the
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-2039-1
Electronic_ISBN :
978-1-4244-2040-7
DOI :
10.1109/IPFA.2008.4588197
