Title :
A study of NBTI in HfSiON/TiN p-MOSFETs using ultra-fast on-the-fly (UF-OTF) IDLIN technique
Author :
Deora, Shweta ; Mahapatra, Souvik
Author_Institution :
Dept. of Electr. Eng., IIT Bombay, Mumbai
Abstract :
Negative bias temperature instability (NBTI) is studied in HfSiON/TiN p-MOSFETs having thin (2 nm) and thick (3 nm) HfSiON layer on top of 1 nm SiO2 interfacial layer. By using ultra fast on the fly IDLIN technique, the impact of stress temperature (T) and oxide field (EOX) on NBTI time evolution is studied. The thickness of the HfSiON layer is shown to have negligible impact on time, T and EOX dependence of NBTI. The impact of time-zero (t0) delay on power law time exponent (n), EOX acceleration (Gamma) of degradation and EOX acceleration (beta) of time to fail (ttF) is also studied. The t0 does not impact Gamma but strongly impacts n, beta and hence extracted safe operating voltage (VGSAFE).
Keywords :
MOSFET; hafnium compounds; semiconductor device reliability; HfSiON; NBTI; negative bias temperature instability; oxide field; p-MOSFET; stress temperature; ultra-fast on-the-fly IDLIN technique; Acceleration; Degradation; Delay effects; MOSFET circuits; Negative bias temperature instability; Niobium compounds; Stress; Tin; Titanium compounds; Voltage;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2008. IPFA 2008. 15th International Symposium on the
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-2039-1
Electronic_ISBN :
978-1-4244-2040-7
DOI :
10.1109/IPFA.2008.4588200
