Title :
Nanoanalysis of high-k dielectrics on semiconductors
Author :
Craven, A.J. ; MacKenzie, M. ; McComb, D.W.
Author_Institution :
Dept. of Phys.&Astron., Univ. of Glasgow, Glasgow
Abstract :
Replacement high-k dielectrics for Si(O,N) in MOSFETs undergo many physical and chemical changes during deposition and processing. The situation is even more complicated when a metal electrode is inserted into the gate stack. Investigation of such systems using advanced nanoanalytical techniques in the transmission electron microscope is discussed.
Keywords :
MOSFET; high-k dielectric thin films; transmission electron microscopy; MOSFET; gate electrode; high-k dielectrics nanoanalysis; nanoanalytical techniques; transmission electron microscope; Capacitance; Chemical processes; Conducting materials; Crystallization; Electrodes; Hafnium oxide; High-K gate dielectrics; MOSFETs; Tin; Transmission electron microscopy;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2008. IPFA 2008. 15th International Symposium on the
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-2039-1
Electronic_ISBN :
978-1-4244-2040-7
DOI :
10.1109/IPFA.2008.4588201
