• DocumentCode
    2410311
  • Title

    Physical characterization challenges in 45 nm technology node

  • Author

    Li, K. ; Liu, P. ; Wang, Q. ; Tee, I. ; Teong, J.

  • Author_Institution
    Chartered Semicond. Manuf. Ltd., Singapore
  • fYear
    2008
  • fDate
    7-11 July 2008
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    The advent of 45 nm technology poses a real challenge to device physical characterization. The shrinkage in dimension makes the characterization of some critical structures very difficult or impossible. The adoption of ultra low K materials even worsens the situation. In this paper, an attempt is made to address some of the challenging characterization issues and some solutions are provided with the aim to facilitate 45 nm process development and optimization.
  • Keywords
    integrated circuit technology; integrated circuits; physical characterization; process development; process optimization; ultralow K materials; Degradation; Electron beams; Focusing; Ion beams; Lighting; Manufacturing industries; Pulp manufacturing; Semiconductor device manufacture; Shadow mapping; Wood industry;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Physical and Failure Analysis of Integrated Circuits, 2008. IPFA 2008. 15th International Symposium on the
  • Conference_Location
    Singapore
  • Print_ISBN
    978-1-4244-2039-1
  • Electronic_ISBN
    978-1-4244-2040-7
  • Type

    conf

  • DOI
    10.1109/IPFA.2008.4588202
  • Filename
    4588202