DocumentCode
2410340
Title
2-GHz band cryogenically-cooled GaN HEMT amplifier for mobile base station receivers
Author
Narahashi, Shoichi ; Suzuki, Yasunori ; Nojima, Toshio
Author_Institution
NTT DoCoMo, Inc, Yokosuka
fYear
2007
fDate
9-12 Oct. 2007
Firstpage
1197
Lastpage
1200
Abstract
This paper presents a 2-GHz band gallium nitride (GaN) high electron mobility transistor (HEMT) amplifier cryogenically cooled to 60 K as a part of the cryogenic receiver front-end (CRFE) for mobile base station receivers. The GaN HEMT amplifier attains the output power of 3 W and the maximum power added efficiency of 62% with a 50 V drain bias for class-AB operation. The results reported herein are the first on the performance of a cryogenically cooled GaN HEMT amplifier aiming at use in a 2-GHz band CRFE.
Keywords
III-V semiconductors; UHF amplifiers; gallium compounds; high electron mobility transistors; radio receivers; wide band gap semiconductors; GaN; HEMT amplifier; UHF amplifier; cryogenic cooling; cryogenic receiver front-end; frequency 2 GHz; mobile base station receivers; Base stations; Cryogenics; FETs; Frequency; Gallium arsenide; Gallium nitride; HEMTs; Linearity; Microwave amplifiers; Power generation; Cryogenic electronics; HEMT; microwave power amplifiers; microwave receivers;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2007. European
Conference_Location
Munich
Print_ISBN
978-2-87487-001-9
Type
conf
DOI
10.1109/EUMC.2007.4405414
Filename
4405414
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