A fully integrated fully differential low-noise amplifier for short range automotive radar using a SiGe:C BiCMOS technology

Author

Chartier, Sebastien ; Schleicher, Bernd ; Korndorfer, F.

Author_Institution

Univ. Ulm, Frankfurt

fYear

2007

fDate

9-12 Oct. 2007

Firstpage

1205

Lastpage

1208

Abstract

A fully integrated fully differential low-noise amplifier for 79 GHz short range radar applications using a highspeed SiGe:C BiCMOS technology is presented. The integrated circuit uses thin-film microstrip lines and exhibits compact design (530 x 690 mum²), low power consumption (90 mW at 3 V supply voltage), high gain (13 dB gain at 81 GHz), good linearity and reverse isolation. In order to ease the measurements of the circuit, a simple technique was used to measure single-ended the differential amplifier. To overcome possible inaccuracy of the line model, shorting bars are placed along these elements to allow easy correction and to avoid redesign.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; MIMIC; differential amplifiers; microstrip lines; millimetre wave amplifiers; road vehicle radar; BiCMOS technology; MIMIC amplifiers; SiGe:C; automotive radar; differential low-noise amplifier; frequency 79 GHz; frequency 81 GHz; gain 13 dB; power 90 mW; thin-film microstrip lines; voltage 3 V; Automotive engineering; BiCMOS integrated circuits; Energy consumption; Gain; Integrated circuit technology; Isolation technology; Low-noise amplifiers; Microstrip; Radar applications; Thin film circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2007. European

Conference_Location

Munich

Print_ISBN

978-2-87487-001-9

Type

conf

DOI

10.1109/EUMC.2007.4405416

Filename

4405416