Interfacial characterization of ultra low-k film (kappa=2.55) with time of flight secondary ion mass spectrometry (TOF-SIMS)

Author

Widodo, J. ; Xing, Z.X. ; Mo, Z.Q. ; Ouyang, T. ; Gui, D ; Hua, Y.N. ; Liu, H. ; Lu, W.

Author_Institution

Technol. & Dev. Dept., Chartered Semicond. Manuf. Ltd., Singapore

fYear

2008

fDate

7-11 July 2008

Firstpage

1

Lastpage

4

Abstract

Interfacial characterization of ultra low-k film with the layer underneath is very important for reliable manufacturing of ultra low-k film. In this study, we proposed a new application of TOF-SIMS to predict the interfacial behavior of the ultra low-k with the layer underneath. Strong correlation between carbon intensity at the bottom interface with the adhesion energy of the ultra low-k with the layer underneath is observed. We also observed a linear correlation between the quantified carbon peak intensity and the adhesion energy.

Keywords

low-k dielectric thin films; time of flight mass spectrometers; adhesion energy; carbon intensity; carbon peak intensity; interfacial characterization; time of flight secondary ion mass spectrometry; ultra low-k film; Adhesives; Chemicals; Energy measurement; Equations; Integrated circuit interconnections; Integrated circuit noise; Mass spectroscopy; Plasma measurements; Semiconductor device manufacture; Semiconductor films;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits, 2008. IPFA 2008. 15th International Symposium on the

Conference_Location

Singapore

Print_ISBN

978-1-4244-2039-1

Electronic_ISBN

978-1-4244-2040-7

Type

conf

DOI

10.1109/IPFA.2008.4588208

Filename

4588208