Title :
Etching of copper in deionized water rinse
Author :
Gambino, J. ; Robbins, J. ; Rutkowski, T. ; Johnson, C. ; DeVries, K. ; Rath, D. ; Vereecken, P. ; Walton, E. ; Porth, B. ; Wenner, M. ; McDevitt, T. ; Chapple-Sokol, J. ; Luce, S.
Author_Institution :
IBM Microelectron., Essex Junction, VT
Abstract :
A new yield loss mechanism is described that is related to the etching of Cu in deionized water. Water that contains high concentrations of dissolved oxygen can etch Cu at the bottom of vias during pre-metallization wet cleans. The etching creates voids in the Cu which remain after metallization, resulting in high resistance and functional fails in the affected array circuits. The dissolved oxygen concentration in the deionized water must be minimized to prevent etching of Cu.
Keywords :
CMOS integrated circuits; copper; etching; integrated circuit interconnections; integrated circuit metallisation; integrated circuit yield; voids (solid); CMOS process; Cu; array circuit; copper etching; copper interconnect; deionized water rinse; dissolved oxygen concentration; pre-metallization wet clean; voids; yield loss mechanism; Anodes; Cathodes; Chemicals; Copper; Corrosion; Electrons; Integrated circuit interconnections; Microelectronics; Water; Wet etching;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2008. IPFA 2008. 15th International Symposium on the
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-2039-1
Electronic_ISBN :
978-1-4244-2040-7
DOI :
10.1109/IPFA.2008.4588209
