Title :
The device characteristics of partially undoped poly-silicon gate P-LDMOS power transistors
Author :
Su, R.Y. ; Chiang, P.Y. ; Gong, J. ; Tsai, J.L. ; Huang, T.Y. ; Liu, Mingo ; Chou, C.C.
Author_Institution :
Dept. of Electron. Eng., Nat. Tsing Hua Univ., Hsinchu
Abstract :
The effect of partially undoped poly-silicon gate above the drift region in P-lateral double-diffused MOS (P-LDMOS) Transistors is investigated. Experiment results show that it can improve the off-state leakage current and reduce the on-state resistance. For hot carrier performance, this structure induces a higher initial current shift due to less vertical field. The long-term hot carrier degradation behavior of this device is the same as that of the standard devices.
Keywords :
electric resistance; leakage currents; power MOSFET; P-LDMOS power transistors; P-lateral double-diffused MOS transistors; hot carrier degradation behavior; hot carrier performance; off-state leakage current; on-state resistance; partially undoped polysilicon gate; Degradation; Electric breakdown; Hot carriers; Intrusion detection; Leakage current; MOSFETs; Measurement standards; Power engineering and energy; Power transistors; Threshold voltage;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2008. IPFA 2008. 15th International Symposium on the
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-2039-1
Electronic_ISBN :
978-1-4244-2040-7
DOI :
10.1109/IPFA.2008.4588212
