Hot carrier degradation in nanowire (NW) FinFETs

Author

Maiti, T.K. ; Bera, M.K. ; Mahato, S.S. ; Chakraborty, P. ; Mahata, C. ; Sengupta, M. ; Chakraborty, A. ; Maiti, C.K.

Author_Institution

Dept. of Electron. & ECE, Indian Inst. of Technol. Kharagpur, Kharagpur

fYear

2008

fDate

7-11 July 2008

Firstpage

1

Lastpage

4

Abstract

Hot carrier reliability of a nanowire Omega-FinFET is investigated for the first time. Hot holes injected into the gate oxide via hot-carrier injection (HCI) at the silicon (Si) - silicon dioxide (SiO₂) interface of Omega-FinFETs results in the formation of dangling silicon bonds due to the breaking of silicon-hydrogen bonds and lead to high interface traps generation. The trapping and/or bond breaking creates oxide charge and interface traps affect the Coulomb mobility. A quasi-two dimensional (quasi-2D) physics-based screening Coulomb scattering mobility model has been developed and implemented in Synopsys Sentaurus Device simulator.

Keywords

MOSFET; carrier mobility; hot carriers; nanowires; semiconductor device reliability; Coulomb scattering mobility model; FinFET; Synopsys Sentaurus Device simulator; hot carrier degradation; hot carrier injection; hot carrier reliability; hot holes; nanowire; Contacts; Degradation; Electron traps; FinFETs; Hot carrier injection; Hot carriers; MOSFETs; Scattering; Silicon; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits, 2008. IPFA 2008. 15th International Symposium on the

Conference_Location

Singapore

Print_ISBN

978-1-4244-2039-1

Electronic_ISBN

978-1-4244-2040-7

Type

conf

DOI

10.1109/IPFA.2008.4588213

Filename

4588213