Title :
Aperture coupled antenna for 122.5 GHz applications with off-chip parasitic patch
Author :
Gottel, B. ; Pauli, Mario ; Zwick, T.
Author_Institution :
Inst. fuer Hochfrequenztech. und Elektron. (IHE), Karlsruhe Inst. of Technol. (KIT), Karlsruhe, Germany
Abstract :
In this paper a SiGe BiCMOS seven metal layer backend process is used for fabricating a strip-line fed on-chip aperture. An off-chip parasitic patch is fed by electromagnetic coupling through the aperture and is realized on a LCP substrate. The off-chip substrate is directly glued to the silicon die by using a compatible LCP bondply material. The antenna is therefore completely shielded from the high permittivity silicon, which results in a high radiation efficiency and higher bandwidth compared to complete on-chip solutions. The antenna covers the 122.5 GHz ISM frequency band by achieving a realized gain of 3.57 dB. The simulated efficiency exceeds 50%.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; antenna feeds; antenna radiation patterns; aperture antennas; electromagnetic coupling; microstrip antennas; millimetre wave antennas; strip line components; 122.5 GHz applications; ISM frequency band; LCP bondply material; LCP substrate; SiGe BiCMOS seven metal backend process; aperture coupled antenna; electromagnetic coupling; frequency 122.5 GHz; high permittivity silicon; off-chip parasitic patch; radiation efficiency; silicon die; strip-line fed on-chip aperture; Antenna measurements; Apertures; Silicon; Substrates; System-on-chip; D-band; Millimeter wave on-chip and off-chip antenna; QFN Package; System in Package (SiP); high efficiency antenna;
Conference_Titel :
Antennas and Propagation (EuCAP), 2014 8th European Conference on
Conference_Location :
The Hague
DOI :
10.1109/EuCAP.2014.6901727