DocumentCode
2410626
Title
Systematic design approach of MOSFET based low noise amplifiers for wideband RF receivers
Author
Schmitz, Jürgen
Author_Institution
Rheinmetall Waffe Munition GmbH, Unterluss
fYear
2007
fDate
9-12 Oct. 2007
Firstpage
1253
Lastpage
1256
Abstract
For MOSFET based RF and UWB receiver circuits a systematic design approach is presented. The procedure yields all possible circuit topologies with up to three voltage controlled current sources (VCCS) which are chosen to describe the first order small signal behaviour of MOSFETs. Completely ignoring design heuristics and experience, circuit topologies and their two- port behaviour are determined in four basic steps: generation of non-isomorphic graphs, determining those circuit topologies with useful signal transfer function, symbolic analysis of the generated circuits and topology selection with a "relational database management system" (RDBMS). After formulating requirements for a wideband low noise amplifier (LNA), the RDBMS yields two new topologies with two VCCS and 625 mostly new topologies with three VCCS. Three examples using three VCCS are chosen and presented.
Keywords
MOSFET; low noise amplifiers; radio receivers; radiofrequency amplifiers; ultra wideband communication; wideband amplifiers; LNA; MOSFET; UWB receiver circuits; low noise amplifiers; non-isomorphic graphs; relational database management system; signal transfer function; systematic design approach; topology selection; voltage controlled current sources; wideband RF receivers; Broadband amplifiers; Circuit noise; Circuit topology; Low-noise amplifiers; MOSFET circuits; Radio frequency; Radiofrequency amplifiers; Signal design; Signal generators; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2007. European
Conference_Location
Munich
Print_ISBN
978-2-87487-001-9
Type
conf
DOI
10.1109/EUMC.2007.4405428
Filename
4405428
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