Broadband MMIC mixer with high output power using InGaP/GaAs HBT technology

Author

Choi, Won-Jun ; Lee, Young-Ho ; Kim, Nam-Young

Author_Institution

Kwangwoon Univ., Seoul

fYear

2007

fDate

9-12 Oct. 2007

Firstpage

1265

Lastpage

1268

Abstract

In this paper, an InGaP/GaAs HBT Broadband MMIC Mixer with high output power is designed within a total chip area of 1.3 x 1.0 mm². The down-conversion mixer shows return loss of -10 dB and a conversion gain of +2.6 dB in the broadband frequency range of 400 MHz to 8 GHz. It also shows a third-order input intercept point (IIP3) of+ 16.78 dBm, a third- order output intercept point (OIP3) of +19.38 dBm, and an output-referred 1-dB compression point (PldB,out) of+10 dBm. The LO-RF leakage is -84dBm and LO-IF is -60 dBm, respectively.

Keywords

III-V semiconductors; MMIC frequency convertors; MMIC mixers; analogue integrated circuits; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; integrated circuit design; HBT technology; InGaP-GaAs; LO-IF leakage; LO-RF leakage; broadband MMIC mixer design; conversion gain; down-conversion mixer; frequency 400 MHz to 8 GHz; output-referred compression point; return loss; third-order input intercept point; third-order output intercept point; Broadband amplifiers; Frequency conversion; Gallium arsenide; Heterojunction bipolar transistors; MMICs; Mixers; Power generation; Radio frequency; Radiofrequency integrated circuits; Semiconductor process modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2007. European

Conference_Location

Munich

Print_ISBN

978-2-87487-001-9

Type

conf

DOI

10.1109/EUMC.2007.4405431

Filename

4405431