Title :
Computer-Simulation of Nonlinear GaAs MESFET Circuits
Author :
Azizi, C. ; Kamdem, J. ; Graffeuil, J. ; Rossel, P.
Author_Institution :
Lab. d´Autom. et d´Anal. des Syst., Toulouse, France
Abstract :
From a computer-aided circuits analysis program, the nonlinear analysis of microwave GaAs field-effect transistors amplifier and the performance and the limitation of Normally-ON Logic gates using MESFET´s are described.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; circuit simulation; digital simulation; logic gates; microwave field effect transistors; computer simulation; computer-aided circuits analysis program; microwave GaAs field-effect transistors amplifier; nonlinear GaAs MESFET circuit; nonlinear analysis; normally-ON logic gates; Circuit analysis computing; FETs; Frequency; Gallium arsenide; Logic circuits; Logic gates; MESFET circuits; Power system modeling; Predictive models; Pulse inverters;
Conference_Titel :
Solid State Circuits Conferene, 1980. ESSCIRC 80. 6th European
Conference_Location :
Grenoble
DOI :
10.1109/ESSCIRC.1980.5468758
