DocumentCode
2410734
Title
Computer-Simulation of Nonlinear GaAs MESFET Circuits
Author
Azizi, C. ; Kamdem, J. ; Graffeuil, J. ; Rossel, P.
Author_Institution
Lab. d´Autom. et d´Anal. des Syst., Toulouse, France
fYear
1980
fDate
22-25 Sept. 1980
Firstpage
142
Lastpage
144
Abstract
From a computer-aided circuits analysis program, the nonlinear analysis of microwave GaAs field-effect transistors amplifier and the performance and the limitation of Normally-ON Logic gates using MESFET´s are described.
Keywords
III-V semiconductors; Schottky gate field effect transistors; circuit simulation; digital simulation; logic gates; microwave field effect transistors; computer simulation; computer-aided circuits analysis program; microwave GaAs field-effect transistors amplifier; nonlinear GaAs MESFET circuit; nonlinear analysis; normally-ON logic gates; Circuit analysis computing; FETs; Frequency; Gallium arsenide; Logic circuits; Logic gates; MESFET circuits; Power system modeling; Predictive models; Pulse inverters;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Circuits Conferene, 1980. ESSCIRC 80. 6th European
Conference_Location
Grenoble
Type
conf
DOI
10.1109/ESSCIRC.1980.5468758
Filename
5468758
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