• DocumentCode
    2410750
  • Title

    CAD Modeling of 2 μm SOS-MOS Transistor and the Parameter Acquisition on an Automatic System

  • Author

    Ballay, N. ; Baylac, B. ; Ledanois, P.

  • Author_Institution
    EFCIS, Grenoble, France
  • fYear
    1980
  • fDate
    22-25 Sept. 1980
  • Firstpage
    145
  • Lastpage
    149
  • Abstract
    We present a CAD model of SOS-MOS transistor with the channel length in the range of 2 μm, and the method for the parameter acquisition on an automatic system driven by a desk-top computer, for the case of the bulk not externally available.
  • Keywords
    CAD; MOSFET; electronic engineering computing; silicon-on-insulator; CAD modeling; SOS-MOS transistor; automatic system; desk-top computer; parameter acquisition; size 2 mum; Decision support systems; Equations; Iterative methods; Space charge; Threshold voltage; Voltage measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Circuits Conferene, 1980. ESSCIRC 80. 6th European
  • Conference_Location
    Grenoble
  • Type

    conf

  • DOI
    10.1109/ESSCIRC.1980.5468759
  • Filename
    5468759
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2410750