DocumentCode :
2410757
Title :
The slow relaxation of capacitance in ferroelectric devices under electrical pulse influence
Author :
Tumarkin, A.V. ; Razumov, S.V. ; Gagarin, A.G. ; Gaidukov, M.M. ; Kozyrev, A.B.
Author_Institution :
St. Petersburg Electrotech. Univ., St. Petersburg
fYear :
2007
fDate :
9-12 Oct. 2007
Firstpage :
1275
Lastpage :
1278
Abstract :
The influence of technology parameters and construction of ferroelectric capacitors on capacitance relaxation mechanisms in BaxSr1-xTiO3 (BSTO) varactors prepared by ion-plasma deposition technique has been investigated. The slow relaxation phenomenon (10divide100 s) in ferroelectric elements in paraelectric state can be explained by the presence of space charge localized on trapping defects in high defected interface layer electrode-ferroelectric.
Keywords :
barium compounds; dielectric relaxation; ferroelectric capacitors; strontium compounds; varactors; BaSrTiO3; capacitance relaxation; electrical pulse influence; ferroelectric capacitors; ion plasma deposition; slow relaxation; trapping defects; varactors; Capacitance measurement; Capacitors; Charge carriers; Electrodes; Ferroelectric devices; Ferroelectric materials; Polarization; Pulse measurements; Space charge; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 2007. European
Conference_Location :
Munich
Print_ISBN :
978-2-87487-001-9
Type :
conf
DOI :
10.1109/EUMC.2007.4405434
Filename :
4405434
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2410757
بازگشت