• DocumentCode
    2410816
  • Title

    Fully Static CMOS 16k RAM using Dynamic Circuitry Technique

  • Author

    Akatsuka, Y. ; Nagahashi, Y. ; Sasaki, I. ; Eguchi, K. ; Hotta, N.

  • Author_Institution
    Nippon Electr. Co., Ltd., Tokyo, Japan
  • fYear
    1980
  • fDate
    22-25 Sept. 1980
  • Firstpage
    155
  • Lastpage
    157
  • Abstract
    A fully static CMOS 16k RAM with fast access time of 87ns and very low power dissipation of 79mW for 200ns cycle time has been realized using dynamic circuitry technique.
  • Keywords
    CMOS memory circuits; low-power electronics; random-access storage; dynamic circuitry; fast access time; fully static CMOS RAM; power 79 mW; storage capacity 16 Kbit; time 87 ns; very low power dissipation; CMOS integrated circuits; Clocks; Decoding; Differential amplifiers; MOS devices; Power dissipation; Random access memory; Read-write memory; Switches; Technological innovation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Circuits Conferene, 1980. ESSCIRC 80. 6th European
  • Conference_Location
    Grenoble
  • Type

    conf

  • DOI
    10.1109/ESSCIRC.1980.5468762
  • Filename
    5468762
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2410816