Title :
Fully Static CMOS 16k RAM using Dynamic Circuitry Technique
Author :
Akatsuka, Y. ; Nagahashi, Y. ; Sasaki, I. ; Eguchi, K. ; Hotta, N.
Author_Institution :
Nippon Electr. Co., Ltd., Tokyo, Japan
Abstract :
A fully static CMOS 16k RAM with fast access time of 87ns and very low power dissipation of 79mW for 200ns cycle time has been realized using dynamic circuitry technique.
Keywords :
CMOS memory circuits; low-power electronics; random-access storage; dynamic circuitry; fast access time; fully static CMOS RAM; power 79 mW; storage capacity 16 Kbit; time 87 ns; very low power dissipation; CMOS integrated circuits; Clocks; Decoding; Differential amplifiers; MOS devices; Power dissipation; Random access memory; Read-write memory; Switches; Technological innovation;
Conference_Titel :
Solid State Circuits Conferene, 1980. ESSCIRC 80. 6th European
Conference_Location :
Grenoble
DOI :
10.1109/ESSCIRC.1980.5468762
