Title :
The impact of substrate bias on proton damage in 130 nm CMOS technology
Author :
Haugerud, Becca M. ; Venkataraman, Sunitha ; Sutton, Akil K. ; Prakash, A. P Gnana ; Cressler, John D. ; Niu, Guofu ; Marshall, Paul W. ; Joseph, Alvin J.
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
The effects of proton irradiation on the dc and ac properties of 130 nm Si CMOS technology are investigated. The impact of substrate bias is reported for the first time. Two different irradiation substrate conditions were used, yielding different results. A comparison is drawn between the present work and a previously reported 180 nm CMOS technology node.
Keywords :
CMOS integrated circuits; elemental semiconductors; integrated circuit testing; proton effects; silicon; 130 nm; 180 nm; CMOS technology; Si; ac properties; dc properties; proton damage; proton irradiation effects; substrate bias; CMOS technology; Circuits; Fingers; Germanium silicon alloys; Ionizing radiation; Isolation technology; Microelectronics; Protons; Silicon germanium; Voltage;
Conference_Titel :
Radiation Effects Data Workshop, 2005. IEEE
Print_ISBN :
0-7803-9367-8
DOI :
10.1109/REDW.2005.1532676
