Title :
Total ionizing dose effects on the analog performance of a 0.13 μm CMOS technology
Author :
Re, Valerio ; Manghisoni, Massimo ; Ratti, Lodovico ; Speziali, Valeria ; Traversi, Gianluca
Author_Institution :
Dipt. di Ingegneria Industriale, Universita di Bergamo, Pavia, Italy
Abstract :
This paper presents a study of the ionizing radiation tolerance of static, signal and noise characteristics of 0.13 μm CMOS transistors, in the context of designing rad-hard analog integrated circuits. Device parameters were monitored before and after irradiation with 60Co γ-rays at a 10 Mrad (SiO2) total ionizing dose. The effects on key parameters such as threshold voltage shift and 1/f noise are studied and compared with the behavior under irradiation of devices in previous CMOS generations.
Keywords :
1/f noise; CMOS analogue integrated circuits; MOSFET; cobalt; gamma-ray effects; semiconductor device noise; semiconductor device testing; silicon compounds; 0.13 micron; 1/f noise; 60Co γ-rays; CMOS technology; CMOS transistors; Co; MOSFET device; SiO2; integrated circuit designing; ionizing radiation tolerance; rad-hard analog integrated circuits; threshold voltage shift; total ionizing dose effects; Analog integrated circuits; CMOS analog integrated circuits; CMOS technology; Condition monitoring; Integrated circuit noise; Integrated circuit technology; Ionizing radiation; Radiation hardening; Signal design; Threshold voltage;
Conference_Titel :
Radiation Effects Data Workshop, 2005. IEEE
Print_ISBN :
0-7803-9367-8
DOI :
10.1109/REDW.2005.1532677
