• DocumentCode
    2411068
  • Title

    Phase Shifters with GaAs Dual Gate MESFETs

  • Author

    Tsironis, C. ; Harrop, P.

  • Author_Institution
    Labs. d´Electron. et de Phys. Appl., Limeil-Brevannes, France
  • fYear
    1980
  • fDate
    22-25 Sept. 1980
  • Firstpage
    212
  • Lastpage
    214
  • Abstract
    Dual gate MESFET phase shifters have been realized in the frequency range of 3 GHz to 12 GHz. Linear phase variation of more than 100° and gain of 4 dB at 12 GHz and 50° with 11 dB gain at 6 GHz have been achieved.
  • Keywords
    III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; linear phase filters; microwave phase shifters; GaAs; dual gate MESFET phase shifter; frequency 3 GHz to 12 GHz; gain 11 dB; gain 4 dB; linear phase variation; Capacitance; Circuits; FETs; Frequency; Gain measurement; Gallium arsenide; MESFETs; Phase measurement; Phase shifters; Resonance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Circuits Conferene, 1980. ESSCIRC 80. 6th European
  • Conference_Location
    Grenoble
  • Type

    conf

  • DOI
    10.1109/ESSCIRC.1980.5468775
  • Filename
    5468775
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2411068