DocumentCode
2411074
Title
Dielectric charging process in AlN RF-MEMS capacitive switches
Author
Papaioannou, George J. ; Lisec, Tomas
Author_Institution
Univ. of Athens, Athens
fYear
2007
fDate
9-12 Oct. 2007
Firstpage
1338
Lastpage
1341
Abstract
The paper investigates the electrical properties of magnetron sputtered A1N in view of application in RF-MEMS capacitive switches. The assessment is performed with the aid of application of thermally stimulate polarization currents in MIM capacitors and temperature dependence of device capacitance. The study reveals the presence of a surface charge, which is smaller than the expected from material spontaneous polarization, but definitely is responsible for the low degradation rate under certain bias polarization life tests.
Keywords
microswitches; polarisation; sputtering; MIM capacitor; RF-MEMS capacitive switch; device capacitance; dielectric charging process; magnetron sputtering; metal-insulator-metal device; microelectromechanical system; polarization current; Capacitance; Dielectrics; MIM capacitors; Magnetic materials; Magnetic properties; Magnetic switching; Polarization; Radiofrequency microelectromechanical systems; Switches; Temperature dependence;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2007. European
Conference_Location
Munich
Print_ISBN
978-2-87487-001-9
Type
conf
DOI
10.1109/EUMC.2007.4405450
Filename
4405450
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