DocumentCode :
2411078
Title :
Rockwell H1RG silicon PIN diode array gamma and proton radiation characterization at cryo temperatures
Author :
Lowell, R. ; Conger, C. ; Rainwater, S. ; Lazo, M. ; Bai, Y.
Author_Institution :
SAIC, Torrance, CA, USA
fYear :
2005
fDate :
11-15 July 2005
Firstpage :
170
Lastpage :
174
Abstract :
The Rockwell Scientific Company, HAWAII-1RG PIN silicon diode array, designed for high performance, low noise applications in ground-based astronomy, has been tested for suitability in space application ranging over a wide selection of orbits. Gamma testing for total ionizing dose (TID) effects in the read out integrated circuit (ROIC) and proton transient and damage testing to characterize the PIN diode response were performed at a range of cryo temperatures. At high damage levels, annealing rates at cryo-temperature were measured. The physical responses are used to develop first-principles physics models useful for predicting and simulating the H1RG performance in orbits of interest for the proposed mission(s).
Keywords :
cryogenic electronics; gamma-ray effects; p-i-n diodes; proton effects; semiconductor device testing; space vehicle electronics; HAWAII-1RG PIN silicon diode array; Rockwell H1RG silicon PIN diode array; annealing rates; cryo temperatures; first-principles physics models; gamma radiation effects; gamma testing; ground-based astronomy; proton damage testing; proton radiation effects; proton transient testing; read out integrated circuits; total ionizing dose effects; Astronomy; Circuit testing; Diodes; Integrated circuit noise; Integrated circuit testing; Orbits; Predictive models; Protons; Silicon; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radiation Effects Data Workshop, 2005. IEEE
Print_ISBN :
0-7803-9367-8
Type :
conf
DOI :
10.1109/REDW.2005.1532685
Filename :
1532685
Link To Document :
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