Title :
High-Speed, Low-Power Logic ICs using Quasi-Normally-Off GaAs MESFETs
Author :
Nuzillat, G. ; Bert, G. ; Damay-Kavala, P. ; Arnodo, C.
Author_Institution :
Lab. Central de Rech., THOMSON-CSF, Orsay, France
Abstract :
Complex logic gates (AND-OR-NAND and OR-AND-NOR) can Be realized with quasi-normally-off GaAs MESFETs which require only one power supply, A single-clocked binary frequency divider has been implemented with OR-NAND gates and operated at clock frequencies up to 650 MHz, Total power consumption is 2.8 mW for the divider circuit, i.e. the measured power-delay product (P.tpd) is 0.27 pJ in the constituent OR-NAND gates.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; clocks; gallium arsenide; logic circuits; logic gates; low-power electronics; GaAs; OR-NAND gates; logic gates; low-power logic IC; power consumption; power supply; quasi-normally-off MESFET; single-clocked binary frequency divider circuit; FETs; Fabrication; Frequency conversion; Gallium arsenide; Inverters; Logic circuits; Logic gates; MESFETs; Schottky diodes; Voltage;
Conference_Titel :
Solid State Circuits Conferene, 1980. ESSCIRC 80. 6th European
Conference_Location :
Grenoble
DOI :
10.1109/ESSCIRC.1980.5468776
