Title :
An X-band high power amplifier module package using selectively anodized aluminum substrate
Author :
Yeo, Sung-Ku ; Chun, Jong-Hoon ; Kim, Kyoung-Min ; Yook, Jong-Min ; Kwon, Young-Se
Author_Institution :
KAIST, Daejeon
Abstract :
In this paper, we made a high power amplifier module package using a selectively anodized aluminum substrate for the X-band radar T/R modules. The proposed solution of package is based on thick anodized aluminum oxide (Al2O3) layers and power chips mounted on aluminum for an effective heat sink. The fabricated high power amplifier module has a maximum output power of 39.49 dBm and maximum gain of 32 dB over 9 - 10 GHz frequency band. This package method can be further contributed to decreasing cost, reducing module size and managing thermal problem for the microwave high power T/R modules.
Keywords :
MMIC power amplifiers; aluminium compounds; anodisation; chip scale packaging; cost reduction; heat sinks; radar equipment; thermal management (packaging); Al2O3; X-band high power amplifier module package; X-band radar T-R modules; effective heat sink; effective thermal management; frequency 8 GHz to 12 GHz; microwave high power T-R modules; pHEMT power chip; power amplifier module fabrication; selectively anodized aluminum substrate; thermal management; thick anodized aluminum oxide layers; Aluminum oxide; Frequency; Gain; Heat sinks; High power amplifiers; Packaging; Power amplifiers; Power generation; Radar; Thermal management; High power amplifiers (HPAs); T/R modules; a selectively anodized aluminum substrate; aluminum oxide (Al2O3); drive amplifier (DA);
Conference_Titel :
Microwave Conference, 2007. European
Conference_Location :
Munich
Print_ISBN :
978-2-87487-001-9
DOI :
10.1109/EUMC.2007.4405455
