An X-band high power amplifier module package using selectively anodized aluminum substrate

Author

Yeo, Sung-Ku ; Chun, Jong-Hoon ; Kim, Kyoung-Min ; Yook, Jong-Min ; Kwon, Young-Se

Author_Institution

KAIST, Daejeon

fYear

2007

fDate

9-12 Oct. 2007

Firstpage

1357

Lastpage

1360

Abstract

In this paper, we made a high power amplifier module package using a selectively anodized aluminum substrate for the X-band radar T/R modules. The proposed solution of package is based on thick anodized aluminum oxide (Al₂O₃) layers and power chips mounted on aluminum for an effective heat sink. The fabricated high power amplifier module has a maximum output power of 39.49 dBm and maximum gain of 32 dB over 9 - 10 GHz frequency band. This package method can be further contributed to decreasing cost, reducing module size and managing thermal problem for the microwave high power T/R modules.

Keywords

MMIC power amplifiers; aluminium compounds; anodisation; chip scale packaging; cost reduction; heat sinks; radar equipment; thermal management (packaging); Al₂O₃; X-band high power amplifier module package; X-band radar T-R modules; effective heat sink; effective thermal management; frequency 8 GHz to 12 GHz; microwave high power T-R modules; pHEMT power chip; power amplifier module fabrication; selectively anodized aluminum substrate; thermal management; thick anodized aluminum oxide layers; Aluminum oxide; Frequency; Gain; Heat sinks; High power amplifiers; Packaging; Power amplifiers; Power generation; Radar; Thermal management; High power amplifiers (HPAs); T/R modules; a selectively anodized aluminum substrate; aluminum oxide (Al2O3); drive amplifier (DA);

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2007. European

Conference_Location

Munich

Print_ISBN

978-2-87487-001-9

Type

conf

DOI

10.1109/EUMC.2007.4405455

Filename

4405455