Title :
Present status and prospects of blue light emitting semiconductor lasers
Author_Institution :
Dept. of Res. & Dev., Nichia Chem. Ind. Ltd., Tokushima, Japan
Abstract :
The InGaN multi-quantum-well-structure laser diodes grown on an epitaxially laterally overgrown GaN on sapphire had an output power as high as 420 mW per facet under RT-CW operation and a lifetime of 250 hours at a constant output power of 30 mW under CW operation at an ambient temperature of 50/spl deg/C.
Keywords :
III-V semiconductors; MOCVD; gallium compounds; indium compounds; life testing; optical testing; quantum well lasers; semiconductor device testing; semiconductor epitaxial layers; 250 h; 30 mW; 420 mW; 50 C; CW operation; GaN; InGaN; InGaN multi-quantum-well-structure laser diodes; RT-CW operation; ambient temperature; blue light emitting semiconductor lasers; constant output power; epitaxially laterally overgrown GaN; lifetime; output power; present status; sapphire; Chemical industry; Chemical lasers; Dielectric substrates; Diode lasers; Gallium nitride; Power generation; Quantum well devices; Research and development; Semiconductor lasers; Threshold current;
Conference_Titel :
Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International
Conference_Location :
Nara, Japan
Print_ISBN :
0-7803-4223-2
DOI :
10.1109/ISLC.1998.734110
