Title :
Analysis of transverse modes of nitride-based laser diodes
Author :
Onomura, M. ; Saito, S. ; Sasanuma, K. ; Gen-Ichi Hatakoshi ; Nakasuji, M. ; Rennie, J. ; Sugiura, L. ; Nunoue, S. ; Suzuki, M. ; Nishio, J. ; Itaya, K.
Author_Institution :
Adv. Semicond. Devices Res. Labs., Toshiba Corp., Kawasaki, Japan
Abstract :
The analysis of the perpendicular far field patterns of nitride-based laser diodes with various types of AlGaN cladding layers is demonstrated. Other results obtained with our nitride-based laser diodes are also demonstrated and discussed.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; laser modes; laser theory; quantum well lasers; AlGaN; AlGaN cladding layers; InGaN; nitride-based laser diodes; perpendicular far field patterns; transverse modes; Aluminum gallium nitride; Diode lasers; Laboratories; Lenses; Optical control; Optical design; Optical materials; Pattern analysis; Pulse measurements; Semiconductor devices;
Conference_Titel :
Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International
Conference_Location :
Nara, Japan
Print_ISBN :
0-7803-4223-2
DOI :
10.1109/ISLC.1998.734112
