Title :
Observation of near field modal emission in InGaN multi-quantum well laser diodes by near field scanning optical microscopy
Author :
Mack, M.P. ; Young, D.K. ; Abare, A.C. ; Hansen, M. ; Coldren, L.A. ; Speck, J.S. ; Hu, E.L. ; Awschalom, D.D. ; DenBaars, S.P.
Author_Institution :
California Univ., Santa Barbara, CA, USA
Abstract :
Near field scanning optical microscopy was used to measure the near field modal profile of InGaN MQW laser diodes. Below threshold the field profile is double lobed with the larger portion of the optical energy residing in the unintentional waveguide formed by the sapphire-GaN-InGaN-AlGaN.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; laser modes; laser variables measurement; near-field scanning optical microscopy; optical testing; quantum well lasers; waveguide lasers; GaN-InGaN-AlGaN; InGaN; InGaN MQW laser diodes; InGaN multi-quantum well laser diodes; below threshold; double lobed; field profile; near field modal emission; near field modal profile; near field scanning optical microscopy; optical energy; sapphire-GaN-InGaN-AlGaN; unintentional waveguide; Aluminum gallium nitride; Atomic force microscopy; Diode lasers; Gallium nitride; Laser modes; Optical materials; Optical microscopy; Optical waveguides; Quantum well devices; Waveguide lasers;
Conference_Titel :
Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International
Conference_Location :
Nara, Japan
Print_ISBN :
0-7803-4223-2
DOI :
10.1109/ISLC.1998.734113
