Title :
Complex spectral behaviour of the waveguide modes in GaInN/GaN laser structures
Author :
Heppel, S. ; Off, J. ; Scholz, F. ; Hangleiter, A.
Author_Institution :
4. Phys. Inst., Stuttgart Univ., Germany
Abstract :
We have investigated GaInN-GaN laser structures with regard to their waveguiding properties. Both experimental and theoretical studies revealed a highly complex mode behaviour, caused by the existence and the interplay between the several guided transverse modes, and dependent on the wavelength.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; laser modes; semiconductor lasers; superradiance; visible spectra; waveguide lasers; GaInN-GaN; GaInN/GaN laser structures; complex spectral behaviour; guided transverse modes; highly complex mode behaviour; waveguide modes; waveguiding properties; Buffer layers; Gallium nitride; Intensity modulation; Laser modes; Laser theory; Optical waveguides; Stimulated emission; Surface emitting lasers; Waveguide lasers; Wavelength measurement;
Conference_Titel :
Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International
Conference_Location :
Nara, Japan
Print_ISBN :
0-7803-4223-2
DOI :
10.1109/ISLC.1998.734114
