DocumentCode :
2411474
Title :
On the universality of negative bias temperature degradation
Author :
Alam, M.A. ; Mahapatra, S. ; Islam, A.E. ; Jain, A.
Author_Institution :
School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana Indian Institute of Technology, Bombay, India
fYear :
2010
fDate :
17-21 Oct. 2010
Firstpage :
1
Lastpage :
1
Abstract :
Over last five years, many industrial/academic research groups have characterized the NBTI degradation through power-law exponents, universality of relaxation, frequency and duty cycle dependencies by using a wide variety of characterization techniques. The scatter in the data has inspired a range of modeling efforts regarding NBTI degradation, with important implications for projected lifetime and technology qualification. In this talk, we will show that the scatter in the data hides a simple universality of the degradation characteristics and that universality of data imposes strict consistency requirements for NBTI theories. We conclude by showing that the existing protocol for qualification and circuit design are theoretically sound, and can be used without significant revision/refinement.
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Integrated Reliability Workshop Final Report (IRW), 2010 IEEE International
Conference_Location :
S. Lake Tahoe, CA, USA
ISSN :
1930-8841
Print_ISBN :
978-1-4244-8521-5
Type :
conf
DOI :
10.1109/IIRW.2010.5706471
Filename :
5706471
Link To Document :
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