Title :
On the ‘permanent’ component of NBTI
Author :
Grasser, T. ; Aichinger, Th ; Reisinger, H. ; Franco, J. ; Wagner, P.-J. ; Nelhiebel, M. ; Ortolland, C. ; Kaczer, B.
Author_Institution :
Christian Doppler Lab. for TCAD, Tech. Univ. Wien, Vienna, Austria
Abstract :
A number of recent publications explain NBTI to be due to a recoverable and a more permanent component. While a lot of information has been gathered on the recoverable component, the permanent component has been somewhat elusive. We demonstrate that oxide defects commonly linked to the recoverable component also form an important contribution to the permanent component of NBTI. As such, they can contribute to both the threshold voltage shift as well as the charge pumping current. Under favorable conditions, the permanent component can show recovery rates comparable to that of the recoverable component.
Keywords :
charge pump circuits; defect states; NBTI; charge pumping current; oxide defects; permanent component; recoverable component; threshold voltage shift; Charge pumps; Degradation; Interface states; Iterative closest point algorithm; Stress; Temperature measurement; Time measurement;
Conference_Titel :
Integrated Reliability Workshop Final Report (IRW), 2010 IEEE International
Conference_Location :
Stanford Sierra, CA
Print_ISBN :
978-1-4244-8521-5
DOI :
10.1109/IIRW.2010.5706472