Title :
Low operating current and high temperature operation of 650 nm AlGaInP high power laser diodes with real refractive index guided self-aligned structure
Author :
Imafuji, O. ; Fukuhisa, T. ; Yuri, M. ; Mannoh, M. ; Yoshikawa, A. ; Itoh, K.
Author_Institution :
Electron. Res. Lab., Matsushita Electron. Corp., Osaka, Japan
Abstract :
Low operating current and high temperature operation has been achieved in 650 nm AlGaInP high power double quantum well laser diodes with a real refractive index guided self-aligned (RISA) structure. The attained operating current for 50 mW CW at 70/spl deg/C is as low as 98 mA, which is almost a half of the lowest value ever reported.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser transitions; quantum well lasers; refractive index; waveguide lasers; 50 mW; 650 nm; 70 C; 98 mA; AlGaInP; AlGaInP high power double quantum well laser diodes; AlGaInP high power laser diodes; RISA structure; high temperature operation; low operating current; real refractive index guided self-aligned structure; Buffer layers; Diode lasers; Laser beams; Photonics; Temperature dependence;
Conference_Titel :
Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International
Conference_Location :
Nara, Japan
Print_ISBN :
0-7803-4223-2
DOI :
10.1109/ISLC.1998.734117
