Low operating current and high temperature operation of 650 nm AlGaInP high power laser diodes with real refractive index guided self-aligned structure

Author

Imafuji, O. ; Fukuhisa, T. ; Yuri, M. ; Mannoh, M. ; Yoshikawa, A. ; Itoh, K.

Author_Institution

Electron. Res. Lab., Matsushita Electron. Corp., Osaka, Japan

fYear

1998

fDate

4-8 Oct. 1998

Firstpage

17

Lastpage

18

Abstract

Low operating current and high temperature operation has been achieved in 650 nm AlGaInP high power double quantum well laser diodes with a real refractive index guided self-aligned (RISA) structure. The attained operating current for 50 mW CW at 70/spl deg/C is as low as 98 mA, which is almost a half of the lowest value ever reported.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser transitions; quantum well lasers; refractive index; waveguide lasers; 50 mW; 650 nm; 70 C; 98 mA; AlGaInP; AlGaInP high power double quantum well laser diodes; AlGaInP high power laser diodes; RISA structure; high temperature operation; low operating current; real refractive index guided self-aligned structure; Buffer layers; Diode lasers; Laser beams; Photonics; Temperature dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International

Conference_Location

Nara, Japan

ISSN

0899-9406

Print_ISBN

0-7803-4223-2

Type

conf

DOI

10.1109/ISLC.1998.734117

Filename

734117