Title :
Highly reliable operation of high-power 0.98-/spl mu/m InGaAs/InGaAsP lasers with a window structure fabricated by Si implantation
Author :
Sagawa, M. ; Hiramoto, K. ; Kikawa, T. ; Tsuji, S.
Author_Institution :
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
Abstract :
We have developed 0.98-/spl mu/m InGaAs-InGaAsP lasers with a window structure fabricated by Si implantation. During testing at 240 mW, lasers showed stable operation with an estimated lifetime of more than 200,000 hours at 25/spl deg/C.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; infrared sources; ion implantation; laser stability; laser transitions; life testing; optical fabrication; optical windows; quantum well lasers; semiconductor device testing; 0.98 mum; 20000 h; 240 mW; 25 C; InGaAs-InGaAsP; InGaAs-InGaAsP lasers; InGaAs/InGaAsP lasers; Si; Si implantation; estimated lifetime; high-power; highly reliable operation; life testing; optical fabrication; stable operation; window structure; Aging; Indium gallium arsenide;
Conference_Titel :
Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International
Conference_Location :
Nara, Japan
Print_ISBN :
0-7803-4223-2
DOI :
10.1109/ISLC.1998.734118
