• DocumentCode
    2411576
  • Title

    Requirement of effective fabless/foundry interactions for achieving robust product reliability

  • Author

    Kalpat, Sriram ; Mogul, Homyar ; Hau-Riege, Christine ; Hnatek, Eugene R. ; Liu, Jonathan H. ; Yau, You-Wen

  • fYear
    2010
  • fDate
    17-21 Oct. 2010
  • Firstpage
    22
  • Lastpage
    22
  • Abstract
    It is no longer sufficient for foundries to provide only process technology qualification data (for example, device hot carrier, TDDB, BTI, interconnect EM, SM etc.) to the fabless companies as it has been done traditionally. At the nanometer scale, process variations (die to die & within die) coupled with shrinking reliability margins have significantly reduced the design space while circuit designs become increasingly complicated. Foundries need to provide detailed reliability information to enable process-variability & reliability-aware designs that allow the fabless users to leverage the benefits of the advanced technologies. The information is needed for all users and is critical to be available in the process development phase for early technology adaptors. Information should include detailed reliability design rules/tools in form of device/interconnect degradation models that incorporate statistical/process variations. These models/tools can help designers to identify and to mitigate circuit reliability risks in the early design phase. This paper addresses this shift of paradigm that allows fabless designs to keep pace with the rapidly changing nano scale technologies.
  • Keywords
    design for manufacture; foundries; integrated circuit design; integrated circuit interconnections; integrated circuit manufacture; integrated circuit modelling; integrated circuit reliability; statistical analysis; circuit designs; circuit reliability risks; design space; detailed reliability information; device degradation models; early technology adaptors; fabless company; fabless designs; fabless interactions; foundry interactions; interconnect degradation models; nano scale technology; nanometer scale; process development phase; process technology qualification data; process variations; process-variability; reliability-aware designs; robust product reliability; shrinking reliability margins; statistical variations;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Integrated Reliability Workshop Final Report (IRW), 2010 IEEE International
  • Conference_Location
    Stanford Sierra, CA
  • ISSN
    1930-8841
  • Print_ISBN
    978-1-4244-8521-5
  • Type

    conf

  • DOI
    10.1109/IIRW.2010.5706476
  • Filename
    5706476