DocumentCode :
2411588
Title :
An Integrated MSI Crosspoints Array
Author :
Blachere, J.M. ; Benichou, C. ; Braquet, H.
Author_Institution :
IBM, France
fYear :
1980
fDate :
22-25 Sept. 1980
Firstpage :
310
Lastpage :
312
Abstract :
A 144 elements array of transistor crosspoints has been realized. It achieves low insertion loss and high dynamic breakdown using a conventional bipolar technology. The chip measures 4.3 × 4.1 mm2 and is mounted on a 76 pins substrate.
Keywords :
electric breakdown; integrated circuit design; transistor circuits; analog speech path; bipolar technology; dynamic breakdown; elements array; insertion loss; integrated MSI crosspoints array; transistor crosspoint; Anodes; Cathodes; Conductivity; Electric breakdown; Epitaxial growth; Insertion loss; Pins; Semiconductor device measurement; Substrates; Thyristors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Circuits Conferene, 1980. ESSCIRC 80. 6th European
Conference_Location :
Grenoble
Type :
conf
DOI :
10.1109/ESSCIRC.1980.5468800
Filename :
5468800
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2411588
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