DocumentCode
2411656
Title
Optical gain properties of 1.3-/spl mu/m n-type modulation-doped MQW lasers for parallel optical interconnections
Author
Nakahara, K. ; Taniwatari, T. ; Haga, T. ; Toyonaka, T. ; Sudoh, T.K. ; Uomi, K.
Author_Institution
Hitachi Ltd., Tokyo, Japan
fYear
1998
fDate
4-8 Oct. 1998
Firstpage
25
Lastpage
26
Abstract
We experimentally demonstrate, for the first time, that the transparent carrier density is reduced in the 1.3-μm n-type modulation-doped MQW laser. This reduction causes the decrease in threshold current and the increase in the slope efficiency.
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; infrared sources; laser transitions; optical interconnections; parallel architectures; quantum well lasers; 1.3 mum; InGaAsP; n-type modulation-doped MQW laser; n-type modulation-doped MQW lasers; optical gain properties; parallel optical interconnections; slope efficiency; threshold current; transparent carrier density; Electrons; Epitaxial layers; Indium gallium arsenide; Lasers and electrooptics; Optical materials; Optical modulation; Optical sensors; Quantum well devices; Quantum well lasers; Temperature dependence;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International
Conference_Location
Nara, Japan
ISSN
0899-9406
Print_ISBN
0-7803-4223-2
Type
conf
DOI
10.1109/ISLC.1998.734121
Filename
734121
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