DocumentCode
2411672
Title
Lasing at 1.3 /spl mu/m in strained quantum well lasers on InGaAs ternary substrates
Author
Otsubo, K. ; Nishijima, Yosuke ; Uchida, Tomoyuki ; Shoji, Hajime ; Nakajima, Kensuke ; Ishikawa, Hiroshi
Author_Institution
RWCP, Fujitsu Labs. Ltd., Atsugi, Japan
fYear
1998
fDate
4-8 Oct. 1998
Firstpage
27
Lastpage
28
Abstract
The InGaAs ternary substrates with an indium composition of 0.31 and 1.3 /spl mu/m strained quantum well lasers on them have been obtained for the first time. The temperature sensitivity of slope efficiency is -0.007 dB/K.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; infrared sources; laser transitions; quantum well lasers; sensitivity; substrates; 1.3 mum; InGaAs; InGaAs ternary substrates; InGaAs-InAlGaAs; indium composition; slope efficiency; strained quantum well lasers; temperature sensitivity; Electrons; Indium gallium arsenide; Laser excitation; Optical pulses; Photonics; Power lasers; Quantum well lasers; Reflectivity; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International
Conference_Location
Nara, Japan
ISSN
0899-9406
Print_ISBN
0-7803-4223-2
Type
conf
DOI
10.1109/ISLC.1998.734122
Filename
734122
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