Title :
Effects of well number on temperature characteristics in 1.3-/spl mu/m AlGaInAs/InP quantum well lasers
Author :
Wada, Hiroyuki ; Takemasa, K. ; Munakata, T. ; Kobayashi, Masato ; Kamijoh, T.
Author_Institution :
Oki Electr. Ind. Co. Ltd., Tokyo, Japan
Abstract :
Effects of well number on temperature characteristics have been investigated in 1.3-/spl mu/m AlGaInAs-InP multiple-quantum-well (MQW) lasers. A record high pulsed operating temperature of 220/spl deg/C has been achieved in lasers with 10 QWs and a small power reduction of -1.68 dB between 20 and 80/spl deg/C has been obtained in lasers with 4 QWs.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; infrared sources; laser transitions; quantum well lasers; 1.3 mum; 20 to 80 C; 220 C; AlGaInAs-InP; AlGaInAs-InP MQW lasers; AlGaInAs/InP quantum well lasers; record high pulsed operating temperature; small power reduction; temperature characteristics; well number; Filters; Four-wave mixing; Frequency conversion; Optical fiber devices; Optical fiber polarization; Optical frequency conversion; Optical noise; Semiconductor device noise; Semiconductor optical amplifiers; Signal to noise ratio;
Conference_Titel :
Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International
Conference_Location :
Nara, Japan
Print_ISBN :
0-7803-4223-2
DOI :
10.1109/ISLC.1998.734123
