Copper - top interconnect reliability for mixed signal applications

Author

Kim, Jonggook ; O´Connell, Barry ; Teng, W.K. ; Poulter, Mark W.

Author_Institution

Adv. Process Technol. Dev., Nat. Semicond. Corp., Santa Clara, CA, USA

fYear

2010

fDate

17-21 Oct. 2010

Firstpage

42

Lastpage

45

Abstract

The equation of resistance drift governing oxidation is derived in this paper for Copper-Top (Cu-Top) interconnects to assess reliability of Cu-Top. Our equation is not only demonstrated by thermal storage tests at various temperatures but also characterized by dependence of time, temperature, metal width, and additional dielectric & conductive layers over Cu-Top. As a result, this approach enables the prediction of the accumulated resistance drift under any conditions for a lifetime operation.

Keywords

integrated circuit interconnections; integrated circuit reliability; mixed analogue-digital integrated circuits; oxidation; accumulated resistance drift; conductive layers; copper-top interconnect reliability; dielectric layers; lifetime operation; mixed signal applications; resistance drift governing oxidation; thermal storage tests; Copper; Oxidation; Reliability; Temperature dependence; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Reliability Workshop Final Report (IRW), 2010 IEEE International

Conference_Location

Stanford Sierra, CA

ISSN

1930-8841

Print_ISBN

978-1-4244-8521-5

Type

conf

DOI

10.1109/IIRW.2010.5706483

Filename

5706483