Title :
Tensile-strained single quantum well 808 nm lasers with Al-free active regions and InGaAlP cladding layers grown by solid source MBE
Author :
Nabiev, R.F. ; Aarik, J. ; Asonen, H. ; Bournes, P. ; Corvini, P. ; Fang, F. ; Finander, M. ; Jansen, M. ; Nappi, J. ; Rakennus, K. ; Salokatve, A.
Author_Institution :
Coherent Inc., Santa Clara, CA, USA
Abstract :
We report reliable 40 W bars and highly efficient (56%) single emitter 808 nm InGaAsP-GaAs quantum well lasers with Al-free active regions. We have demonstrated excellent performance characteristics of high power 808 nm single emitter lasers and bars with Al-free active region grown by solid source molecular beam epitaxy (SSMBE).
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; infrared sources; laser transitions; molecular beam epitaxial growth; quantum well lasers; semiconductor growth; 40 W; 56 percent; 808 nm; Al-free active regions; InGaAlP; InGaAlP cladding layers; InGaAsP-GaAs; InGaAsP-GaAs quantum well lasers; highly efficient; performance characteristics; reliable; single emitter; solid source MBE; solid source molecular beam epitaxy; tensile-strained single quantum well 808 nm lasers; Bars; Laser excitation; Laser modes; Power conversion; Pump lasers; Quantum well lasers; Solid lasers; Surface emitting lasers; Surface resistance; Temperature;
Conference_Titel :
Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International
Conference_Location :
Nara, Japan
Print_ISBN :
0-7803-4223-2
DOI :
10.1109/ISLC.1998.734128
