Title :
Impact of body tie and Source/Drain contact spacing on the hot carrier reliability of 45-nm RF-CMOS
Author :
Arora, Rajan ; Moen, Kurt A. ; Madan, Anuj ; Cressler, John D. ; Zhang, EnXia ; Fleetwood, Daniel M. ; Schrimpf, Ronald D. ; Sutton, Akil K. ; Nayfeh, Hasan M.
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
We report the hot carrier reliability (HCR) of 45-nm SOI CMOS technology. Body contacted devices are shown to be more reliable than floating-body devices. Two different body-contacting schemes are investigated (T-body and notched T- body). The effects of total dose irradiation on reliability are investigated. Body contacted devices are shown to be more tolerant to radiation than floating-body devices. Asymmetric halo doping devices show less hot carrier degradation than symmetric halo doping devices. In addition, we investigate the dependence of hot carrier reliability on the metal contact spacing of the Source/Drain (S/D) terminals, the PC-PC spacing, and the RF device performance trade-offs that result.
Keywords :
CMOS integrated circuits; hot carriers; integrated circuit reliability; radiation hardening (electronics); radiofrequency integrated circuits; RF CMOS; asymmetric halo doping device; body tie; floating body device; hot carrier degradation; hot carrier reliability; notched T- body; size 45 nm; source-drain contact spacing; total dose irradiation; CMOS integrated circuits; Electric fields; Hot carriers; Performance evaluation; Radio frequency; Semiconductor device reliability; HCR; RF; RFCMOS; S/D; T-body; fT; reliability;
Conference_Titel :
Integrated Reliability Workshop Final Report (IRW), 2010 IEEE International
Conference_Location :
Stanford Sierra, CA
Print_ISBN :
978-1-4244-8521-5
DOI :
10.1109/IIRW.2010.5706486
