Title :
Multiple microscopic defects characterization methods to improve macroscopic degradation modeling of MOSFETs
Author :
Randriamihaja, Y. Mamy ; Bravaix, A. ; Huard, V. ; Rideau, D. ; Rafik, M. ; Roy, D.
Author_Institution :
STMicroelectronics, Crolles, France
Abstract :
Degradation modeling is based usually on macroscopic parameters which can yield to wrong conclusions, since similar degradation might result from very different microscopic situations. The focus on degradation modeling at a microscopic level is proposed. Other authors only compare results from different characterization methods on their common measurement area. This paper proposes to use their complementarities to extend the probed areas. A more accurate determination of defects is obtained with multiple characterization method cross-fertilization allowing 1) ascertaining defect localizations, 2) extending probed areas and 3) identifying microscopic differences between similar macroscopic parameters. The tested devices are NMOS transistors with a 5 nm SiO2 gate oxide and with various gate geometries.
Keywords :
MOSFET; semiconductor device models; silicon compounds; MOSFET; NMOS transistors; SiO2; defect localizations; gate geometry; gate oxide; macroscopic degradation modeling; microscopic defects characterization; Degradation; Energy measurement; Logic gates; MOSFETs; Microscopy; Stress; Stress measurement;
Conference_Titel :
Integrated Reliability Workshop Final Report (IRW), 2010 IEEE International
Conference_Location :
Stanford Sierra, CA
Print_ISBN :
978-1-4244-8521-5
DOI :
10.1109/IIRW.2010.5706487