Title :
Temperature insensitive characteristics of 1.06 /spl mu/m strain-compensated single quantum well laser diodes (SQW-LDs)
Author :
Asano, H. ; Wada, M. ; Fukunaga, T. ; Hayakawa, T.
Author_Institution :
Miyanodai Technol. Dev. Center, Fuji Photo Film Co. Ltd., Kanagawa, Japan
Abstract :
Temperature insensitive characteristics have been demonstrated in single mode 1.06 μm InGaAs SQW-LDs with AlGaInP current blocking layer and GaAsP barrier layers which act as strain compensation and electron barriers.
Keywords :
III-V semiconductors; compensation; gallium arsenide; indium compounds; laser modes; laser transitions; quantum well lasers; 1.06 mum; AlGaInP; AlGaInP current blocking layer; GaAsP barrier layers; InGaAs; InGaAs SQW-LDs; electron barriers; single mode; strain compensation barriers; strain-compensated single quantum well laser diodes; temperature insensitive characteristics; Indium gallium arsenide; Photonic band gap; Power generation; Temperature; Threshold current;
Conference_Titel :
Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International
Conference_Location :
Nara, Japan
Print_ISBN :
0-7803-4223-2
DOI :
10.1109/ISLC.1998.734130
