Title :
Tensile-strained GaAs/sub 1-y/P/sub y/-AlGaAs quantum well diode lasers emitting between 715 nm and 790 nm
Author :
Erbert, G. ; Bugge, F. ; Knauer, A. ; Sebastian, J. ; Thies, A. ; Wenzel, H. ; Weyers, M. ; Trankle, G.
Author_Institution :
Ferdinand-Braun-Inst. fur Hochstfrequenztechnik, Berlin, Germany
Abstract :
Tensile-strained GaAs/sub 1-y/P/sub y/ QWs in LOC-AlGaAs structures for high power lasers at wavelengths below 800 nm were studied. At 735 nm a threshold current density of 180 A/cm/sup 2/ and a wall plug efficiency of 50% at 1.8 W have been achieved.
Keywords :
III-V semiconductors; aluminium compounds; current density; gallium arsenide; gallium compounds; infrared sources; laser transitions; quantum well lasers; 1.8 W; 50 percent; 715 nm; 790 nm; AlGaAs; GaAs/sub 1-y/P/sub y/ QWs; GaAsP; LOC-AlGaAs structures; high power lasers; tensile-strained GaAs/sub 1-y/P/sub y/-AlGaAs quantum well diode lasers; threshold current density; wall plug efficiency; Charge carrier processes; Diode lasers; Gallium arsenide; Plugs; Power generation; Power lasers; Reflectivity; Solid state circuits; Threshold current; USA Councils;
Conference_Titel :
Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International
Conference_Location :
Nara, Japan
Print_ISBN :
0-7803-4223-2
DOI :
10.1109/ISLC.1998.734131
