Title :
High average power density (0.2-0.65 kW/cm/sup 2/) diode laser stacks for 808 nm, 915 nm & 940 nm wavelengths
Author :
Gupta, S. ; Garcia, A. ; Srinivasan, S. ; He, X. ; Wilson, S. ; Harrison, J. ; Patel, R.
Author_Institution :
Opto-Power Corp., Tucson, AZ, USA
Abstract :
Combining developments in high-power (/spl sim/100 W) laser diode arrays and high heat flux (kW/cm/sup 2/) water-cooled Cu-´mini-channel´ heatsinks, we demonstrate record average power density operation of diode laser stacks. Using advanced die attachment, record CW power levels of 180 W and 108 W has been demonstrated at 915 nm & 808 nm, respectively, from 1 cm wide laser arrays on such heatsinks.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heat sinks; indium compounds; laser transitions; quantum well lasers; semiconductor laser arrays; 1 cm; 108 W; 180 W; 808 nm; 915 nm; 940 nm; AlGaAs-InGaAs-GaAs; Cu mini-channel heatsinks; advanced die attachment; diode laser stacks; high average power density; high heat flux; laser diode arrays; record CW power levels; record average power density operation; single quantum well laser arrays; water-cooled; Diode lasers; Electrons; Glass; Heat sinks; Impedance; Laser excitation; Life estimation; Optical arrays; Optical materials; Semiconductor laser arrays;
Conference_Titel :
Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International
Conference_Location :
Nara, Japan
Print_ISBN :
0-7803-4223-2
DOI :
10.1109/ISLC.1998.734133
