Title :
Improved characteristic temperature of 780 nm AlGaAs/AlGaInP QW laser-diodes for high speed laser beam printer applications
Author :
Valster, A. ; Weegels, L.M. ; Brouwer, A.A. ; Corbijn, A.J. ; van Engelen, G.J.P. ; Vermunt, L.W.A. ; Lodders, W.H.M.
Author_Institution :
Philips Optoelectron. Res., Eindhoven, Netherlands
Abstract :
Reduced leakage current in 780 nm AlGaAs lasers-diodes is obtained for the first time by replacing AlGaAs cladding layers with AlGaInP ones. The overall temperature performance of the laser-diode is now drastically improved (T/sub 0/>200 K) resulting in a record low droop value (D<4%) over a wide temperature- and power range making these lasers extremely suitable for high-end laser beam printers.
Keywords :
Debye temperature; III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; infrared sources; laser printers; laser transitions; leakage currents; quantum well lasers; 200 K; 780 nm; AlGaAs; AlGaAs cladding layers; AlGaAs/AlGaInP QW laser-diodes; AlGaInP; characteristic temperature; high speed laser beam printer applications; high-end laser beam printers; laser-diode; overall temperature performance; power range; record low droop value; reduced leakage current; wide temperature; Electrons; Laser stability; Leakage current; Power lasers; Printers; Quantum well lasers; Semiconductor lasers; Temperature dependence; Temperature distribution; Threshold current;
Conference_Titel :
Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International
Conference_Location :
Nara, Japan
Print_ISBN :
0-7803-4223-2
DOI :
10.1109/ISLC.1998.734134
