DocumentCode :
2411930
Title :
Universal rule for determining the critical temperature in the high-temperature characteristics of quantum well lasers operating at 1.3 /spl mu/m
Author :
Seki, S. ; Yokoyama, K.
Author_Institution :
NTT Opto-Electron. Labs., Kanagawa, Japan
fYear :
1998
fDate :
4-8 Oct. 1998
Firstpage :
59
Lastpage :
60
Abstract :
We derive a universal rule for determining the critical temperature (T/sub c/) of 1.3-/spl mu/m quantum-well (QW) lasers on the basis of Landau theory of second-order phase transition. We demonstrate that, contrary to expectations, an optimum well depth, which brings about the maximum T/sub c/, depends on a given cavity loss. The maximum T/sub c/´s possible for InGaAsP and AlGaInAs QW lasers are also demonstrated.
Keywords :
infrared sources; laser cavity resonators; laser theory; laser transitions; optical losses; quantum well lasers; semiconductor device models; solid-state phase transformations; 1.3 mum; 1.3-/spl mu/m QW lasers; AlGaInAs; InGaAsP; Landau theory; cavity loss; critical temperature; high-temperature characteristics; optimum well depth; quantum well lasers; second-order phase transition; universal rule; Degradation; Fiber lasers; Laser modes; Laser theory; Laser transitions; Optical materials; Poisson equations; Power lasers; Quantum well lasers; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International
Conference_Location :
Nara, Japan
ISSN :
0899-9406
Print_ISBN :
0-7803-4223-2
Type :
conf
DOI :
10.1109/ISLC.1998.734136
Filename :
734136
Link To Document :
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