Title :
Characterization of anomalous erase effects in 48 nm TANOS memory cells
Author :
Loehr, D.-A. ; Hoffmann, R. ; Naumann, A. ; Paul, J. ; Seidel, K. ; Czernohorsky, M. ; Beyer, V.
Author_Institution :
Fraunhofer Center Nanoelectronic Technol., Dresden, Germany
Abstract :
On TANOS (Tantalum Alumina Nitride Oxide Silicon) charge trap cells an anomalous effect is observed during cell erase operation. Different TANOS cell architectures are investigated including an encapsulation liner of different thickness. Especially on cells fabricated without such a liner an unintended programming is observed and characterized in detail. A new characterization method is proposed to analyze this anomalous erase effect observed as an “erase hump” in transient erase characteristics. This effect is studied and discussed in correlation with liner thickness and cell retention behavior supported by electrical field simulations for cell erase conditions.
Keywords :
aluminium compounds; electron traps; flash memories; silicon; silicon compounds; tantalum compounds; Si-SiO2-SiN-Al2O3-TaN; TANOS memory cells; anomalous cell erase effects; cell retention behavior; charge trap cells; encapsulation liner; erase hump; size 48 nm; Aluminum oxide; Encapsulation; Logic gates; Programming; Threshold voltage; Transient analysis;
Conference_Titel :
Integrated Reliability Workshop Final Report (IRW), 2010 IEEE International
Conference_Location :
Stanford Sierra, CA
Print_ISBN :
978-1-4244-8521-5
DOI :
10.1109/IIRW.2010.5706494
