Title :
Observation of reduced non-radiative recombination current in 1.3-/spl mu/m AlGaInAs/InP multiple-quantum-well lasers
Author :
Higashi, T. ; Sweeney, S.J. ; Phillips, A.F. ; Adams, A.R. ; O´Reilly, E.P. ; Uchida, T. ; Fujii, T.
Author_Institution :
Dept. of Phys., Surrey Univ., Guildford, UK
Abstract :
We investigated experimentally the temperature dependence of the threshold current in 1.3-/spl mu/m AlGaInAs-InP MQW lasers, and found that compared with GaInAsP-InP devices the higher characteristic temperature was caused by a reduction of the non-radiative recombination current.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; infrared sources; laser transitions; nonradiative transitions; quantum well lasers; 1.3 mum; 1.3-/spl mu/m AlGaInAs/InP MQW lasers; AlGaInAs-InP; AlGaInAs/InP multiple-quantum-well lasers; GaInAsP-InP; higher characteristic temperature; nonradiative recombination current; temperature dependence; threshold current; Charge carrier density; Current measurement; Indium phosphide; Laser theory; Quantum well devices; Radiative recombination; Reactive power; Temperature dependence; Temperature sensors; Threshold current;
Conference_Titel :
Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International
Conference_Location :
Nara, Japan
Print_ISBN :
0-7803-4223-2
DOI :
10.1109/ISLC.1998.734137
