DocumentCode
2412045
Title
Gain-coupled DFB lasers with reduced optical confinement for narrow spectral-linewidth
Author
Inaba, Y. ; Kito, M. ; Ohya, J. ; Ishino, M. ; Matsui, Yusuke
Author_Institution
Electron. Res. Lab., Matsushita Electron. Corp., Osaka, Japan
fYear
1998
fDate
4-8 Oct. 1998
Firstpage
71
Lastpage
72
Abstract
Effect of reducing optical confinement in DFB lasers on spectral linewidth as well as single-mode stability are clarified, for the first time. A narrow spectral-linewidth of 74 kHz, which is the narrowest ever reported in gain-coupled DFB lasers, is realized.
Keywords
III-V semiconductors; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; laser modes; laser stability; quantum well lasers; spectral line breadth; InGaAsP; InGaAsP MQW lasers; gain-coupled DFB lasers; narrow spectral-linewidth; reduced optical confinement; single-mode stability; Electron optics; Gratings; Indium phosphide; Optical buffering; Potential well; Power generation; Power lasers; Quantum well lasers; Temperature; Threshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International
Conference_Location
Nara, Japan
ISSN
0899-9406
Print_ISBN
0-7803-4223-2
Type
conf
DOI
10.1109/ISLC.1998.734142
Filename
734142
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