Title :
Gain-coupled DFB lasers with reduced optical confinement for narrow spectral-linewidth
Author :
Inaba, Y. ; Kito, M. ; Ohya, J. ; Ishino, M. ; Matsui, Yusuke
Author_Institution :
Electron. Res. Lab., Matsushita Electron. Corp., Osaka, Japan
Abstract :
Effect of reducing optical confinement in DFB lasers on spectral linewidth as well as single-mode stability are clarified, for the first time. A narrow spectral-linewidth of 74 kHz, which is the narrowest ever reported in gain-coupled DFB lasers, is realized.
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; laser modes; laser stability; quantum well lasers; spectral line breadth; InGaAsP; InGaAsP MQW lasers; gain-coupled DFB lasers; narrow spectral-linewidth; reduced optical confinement; single-mode stability; Electron optics; Gratings; Indium phosphide; Optical buffering; Potential well; Power generation; Power lasers; Quantum well lasers; Temperature; Threshold current;
Conference_Titel :
Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International
Conference_Location :
Nara, Japan
Print_ISBN :
0-7803-4223-2
DOI :
10.1109/ISLC.1998.734142
